FinFET/GAA Modeling for IC Simulation and Design
-10%
portes grátis
FinFET/GAA Modeling for IC Simulation and Design
Using the BSIM-CMG Standard
Salahuddin, S.; Dasgupta, Avirup; Chauhan, Yogesh Singh; Hu, Chenming; Duarte, Juan Pablo; Payvadosi, Navid; Lu, Darsen; Vanugopalan, Sriramkumar; Khandelwal, Sourabh; Pahwa, Girish
Elsevier Science & Technology
08/2024
324
Mole
Inglês
9780323957298
15 a 20 dias
Descrição não disponível.
1. 3D thin-body FinFET and GAA: From device to compact model
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
FinFET; GAA; BSIM-CMG; cryogenic modeling
1. 3D thin-body FinFET and GAA: From device to compact model
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
