Handbook of Silicon Based MEMS Materials and Technologies

Impact of Silicon MEMS Section I: Silicon as MEMS Material 1. Properties of Silicon 2. Czochralski Growth of SiliconCrystals 3. Properties of Silicon Crystals 4. Silicon Wafers: Preparation and Properties 5. Epi Wafers: Preparation and Properties 6. Thin Films on Silicon 6.1 Thin films on Silicon: Silicon dioxide 6.2 Thin films on Silicon: Silicon nitride 6.3 Thin Films on Silicon: Poly-Si and SiGe 6.4 Thin films on Silicon: AlD 6.5 Thin Films on Silicon: Piezofilms 6.6 Thin Films on Silicon: Metal films 7. Thick-Film SOI Wafers: Preparation and Properties Section II: Modeling in MEMS 8. Multiscale Modeling Methods 9. Mechanical Properties of Silicon Microstuctures 10. Electrostatic and RF-properties of MEMS Structures 11. Optical Modeling of MEMS 12. Simulations of Etching Processes for MEMS Fabrication 13. Gas Damping in Vibrating MEMS Structures Section III: Measuring MEMS 14. Introduction to Measuring MEMS 15. Silicon Wafer and Thin Film Measurements 16. Optical Measurement of Static and Dynamic Displacement in MEMS 17. MEMS Residual Stress Characterization: Methodology and Perspective 18. Strength of Bonded Interfaces 19. Oxygen and Bulk Microdefects in Silicon Section IV: Micromachining Technologies in MEMS 20. MEMS Lithography 21. Deep Reactive Ion Etching 22. Wet Etching of Silicon 23. Porous Silicon Based MEMS 24. Surface Micromachining 25. Vapour Phase Etch Processes for Silicon MEMS 26. 2 3-D Printing for MEMS 27. Microfluidics and Biomems in Silicon Section V: Encapsulation of MEMS Components 28. Introduction to encapsulation of MEMS 29. Silicon Direct Bonding 30. Anodic Bonding 31. Glass Frit Bonding 32. Metallic Alloy Seal Bonding 33. Bonding of CMOS Processed Wafers 34. Wafer Bonding: Tools and Processes 35. Encapsulation by Film Deposition 36. Dicing of MEMS Devices 37. 3D Integration of MEMS 38. Via Technologies for MEMS 39. Outgassing and Gettering 40. Hermeticity Tests 41. MEMS Reliability 42. Appendix 1: Common Abbreviations and Acronyms 43. Appendix 2: Nanoindentation Characterization of Silicon and other MEMS Materials

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• Ciência dos materiais
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3D integration; Adhesive bonding; Alignment; Anisotropic etching; Anodic bonding; Argon beam activation; Autodoping; Barrier layer deposition; BioMEMS; Blade dicing; Blister tests; Bombing; Bond quality; Bonded SOI wafers; Bosch process; Bulge test; Bulk microdefects; Buried cavities; CMOS wafers; CZ furnace; Cantilever beam method; Capacitance-voltage measurement; Chemical etching; Chemical vapor deposition; Conductive glass frit; Contaminants; Contamination; Continuous flow; Control methods; Crack opening method; Creep; Cryo-process; Crystal defects; Crystallography; Curvature measurement technique; Czochralski growth of silicon; Czochralski-grown silicon; Deep reactive ion etching; Deep reactive-ion etching (DRIE); Defects; Density functional theory; Deposition; Diamond scribe; Dicing; Dielectric breakdown; Diffraction; Direct bonds; Dislocations; Donor killing; Dopants; Doping effects; Doping species; Dynamic displacement; E-beam assisted deposition; Edge grinding; Electrical resistivity; Electromagnetic optics; Electromechanical functionalities; Electrophoresis; Electrostatic force; Ellipsometry; Encapsulation; Epi-poly process; Epitaxial deposition; Etch stop layers; Etching; Eutectic bonding; Faceting; Failure mechanisms; Fatigue; Finite time difference domain; Finite-element method; First level package; Float-zone method; Focused ion beam milling; Four-point probe; Fourier transform infrared spectroscopy; Frequency dependency; Gas chromatography; Gas damping; Gas rarefaction; Geometrical optics; Getter films; Gettering; Getters; Glass frit bonding; Hermetic packaging; Hermeticity; Heterodyne interferometer; Heterogeneous integration; Homodyne interferometer; Hot zone; Hydrophilic bonding; Hydrophobic bonding; Impurities; Inclined exposure; Indentation testing; Ingot cutting; Ingot shaping; Inkjet printing